? 2002 ixys all rights reserved v ces = 600 v i c25 =70 a v ce(sat) = 2.1 v t fi(typ) = 180 ns hiperfast tm igbt isoplus247 tm (electrically isolated backside) isoplus 247 g = gate, c = collector e = emitter * patent pending e153432 symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c 70 a i c90 t c = 90 c 35 a i cm t c = 25 c, 1 ms 150 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 80 a (rbsoa) clamped inductive load, l = 100 h @ 0.8 v ces p c t c = 25 c 200 w t j -40 ... +150 c t jm 150 c t stg -40 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight 5g g c e isolated backside* symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 40n60b 600 v i c = 750 a 40n60bd1 600 v ge(th) i c = 250 a, v ce = v ge 40n60b 2.5 5.0 v i c = 500 a 40n60bd1 2.5 5.0 v i ces v ce = 0.8 v ces t j = 25 c 40n60b 200 a v ge = 0 v; note 1 t j = 25 c 40n60bd1 650 a t j = 125 c 40n60b 1 ma t j = 125 c 40n60bd1 3 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i t , v ge = 15 v 1.6 2.1 v features dcb isolated mounting tab meets to-247ad package outline high current handling capability latest generation hdmos tm process mos gate turn-on - drive simplicity low collector-to-drain capacitance (<35pf) applications uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies ac motor speed control dc servo and robot drives dc choppers advantages easy assembly high power density ixgr 40n60b ixgr 40n60bd1 (d1) 98800a (02/02)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixgr 40n60b ixgr 40n60bd1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i t ; v ce = 10 v, 30 42 s pulse test, t 300 s, duty cycle 2 % c ies 3300 pf 40n60b 310 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 40n60bd1 370 pf c res 65 pf q g 116 nc q ge i c = i t , v ge = 15 v, v ce = 0.5 v ces 23 nc q gc 55 nc t d(on) 25 ns t ri 30 ns t d(off) 180 300 ns t fi 180 270 ns e off 2.7 4.0 mj t d(on) 25 ns t ri 30 ns e on 40n60b 0.4 mj t d(off) 40n60bd1 1.2 mj t fi 300 ns 270 ns e off 4.0 mj r thjc 0.6 k/w r thck 0.15 k/w inductive load, t j = 25 c i c = i t , v ge = 15 v v ce = 0.8 v ces , r g = r off = 4.7 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i t , v ge = 15 v v ce = 0.8 v ces , r g = r off = 4.7 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g isoplus 247 outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 1 gate, 2 drain (collector) 3 source (emitter) 4 no connection reverse diode (fred) (IXGR40N60Bd1) characteristic values (t j = 25c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i t , v ge = 0 v, t j = 150c 1.3 v note 1 1.8 v i rm i f = i t , v ge = 0 v, v r = 100 v t j = 100c,-di/dt = 100 a/ s 7.5 a t rr i f = 1 a; -di/dt = 100 a/ s; v r = 30 v 35 n s r thjc 0.90 k/w note: 1. pulse test, t p 300 ms, duty cycle:d 2 % 2. i t = 40a
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